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DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2101M16
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
* The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz * Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz * High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V * 6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
Part Number NESG2101M16 Order Number NESG2101M16-A Package 6-pin lead-less minimold (M16, 1208 PKG) NESG2101M16-T3 NESG2101M16-T3-A (Pb-Free) Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form * 8 mm wide embossed taping * Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
2
Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 13.0 5.0 1.5 100 190 150 -65 to +150
Unit V V V mA mW C C
Tj Tstg
Note Mounted on 1.08 cm x 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. PU10395EJ03V0DS (3rd edition) Date Published September 2009 NS Printed in Japan
The mark shows major revised points.
2003, 2009
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NESG2101M16
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) Noise Figure (2) Associated Gain (1) Associated Gain (2) Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power fT S21e NF NF Ga Ga Cre
Note 2 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO IEBO hFE
Note 1
VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 15 mA
- - 130
- - 190
100 100 260
nA nA -
VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt
14 11.5 - - 11.0 - - 14.5 - -
17 13.5 0.9 0.6 13.0 19.0 0.4 17.0 21
- - 1.2 - - - 0.5 - - -
GHz dB dB dB dB dB pF dB dBm
MSG
Note 3
PO (1 dB)
Linear Gain
GL
VCE = 3.6 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt
15
dBm
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12
hFE CLASSIFICATION

Rank Marking hFE Value FB/YFB zH 130 to 260
2
Data Sheet PU10395EJ03V0DS
NESG2101M16

TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Total Power Dissipation Ptot (mW)
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
300 250 200
190
1.0 f = 1 MHz 0.8
Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) )
0.6
150 100 50
0.4
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature TA (C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 10 1 0.1 0.01 0.001 VCE = 1 V
Collector Current IC (mA)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 10 1 0.1 0.01 0.001 VCE = 2 V
Collector Current IC (mA)
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 10 1 0.1 0.01 0.001 VCE = 3 V
Collector Current IC (mA)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 10 1 0.1 0.01 0.001 VCE = 4 V
Collector Current IC (mA)
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
3
NESG2101M16
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
100 90
Collector Current IC (mA)
80 70 60 50 40 30 20 10 0 1 2
500 A 450 A 400 A 350 A 300 A 250 A 200 A 150 A 100 A IB = 50 A 3 4 5 6
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1 000 VCE = 1 V 1 000
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 2 V
DC Current Gain hFE
100
DC Current Gain hFE
100
10 0.1
1
10
100
10 0.1
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1 000 VCE = 3 V 1 000
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 4 V
DC Current Gain hFE
DC Current Gain hFE
100
100
10 0.1
1
10
100
10 0.1
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10395EJ03V0DS
NESG2101M16
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
30
Gain Bandwidth Product fT (GHz)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
30
Gain Bandwidth Product fT (GHz)
25 20 15 10 5 0 1
VCE = 1 V, f = 2 GHz
25 20 15 10 5 0 1
VCE = 2 V, f = 2 GHz
10 Collector Current IC (mA)
100
10 Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
30
Gain Bandwidth Product fT (GHz)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
30
Gain Bandwidth Product fT (GHz)
25 20 15 10 5 0 1
VCE = 3 V, f = 2 GHz
25 20 15 10 5 0 1
VCE = 4 V, f = 2 GHz
10 Collector Current IC (mA)
100
10 Collector Current IC (mA)
100
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
5
NESG2101M16
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MSG VCE = 1 V, IC = 50 mA MAG 40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MSG MAG
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
VCE = 2 V, IC = 50 mA
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MSG MAG
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MSG MAG VCE = 4 V, IC = 40 mA
VCE = 3 V, IC = 50 mA
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10395EJ03V0DS
NESG2101M16
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT
30
Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB)
30 25 20 15 10 5 0 VCE = 1 V, f = 1 GHz MSG MAG
25 20 15 10 5 0
VCE = 2 V, f = 1 GHz MSG
|S21e|2
|S21e|2
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
30 25 20 15 10 5
30 25 20 15 10 5 0 |S21e|2 VCE = 2 V, f = 2 GHz MSG MAG
VCE = 1 V, f = 2 GHz
MSG
MAG
|S21e|2 0 1 10 Collector Current IC (mA) 100
1
10 Collector Current IC (mA)
100
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
20 VCE = 1 V, f = 3 GHz 15 MSG 10 MAG
20 VCE = 2 V, f = 3 GHz 15 MSG MAG
10
5 |S21e|2 0 1 10 Collector Current IC (mA) 100
5 |S21e|2 0 1 10 Collector Current IC (mA) 100
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
7
NESG2101M16
INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB)
VCE = 3 V, f = 1 GHz MSG
INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB)
30 25 20 15 10 5 0 |S21e|2 VCE = 4 V, f = 1 GHz MSG
30 25 20 15 10 5 0 |S21e|2
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
30 25 20 15 10 5 |S21e|2 0 1 10 Collector Current IC (mA) 100 VCE = 3 V, f = 2 GHz MSG MAG
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
30 25 20 15 10 5 |S21e|2 0 1 10 Collector Current IC (mA) 100 VCE = 4 V, f = 2 GHz MSG MAG
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
20 VCE = 3 V, f = 3 GHz 15 MSG MAG
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
20 VCE = 4 V, f = 3 GHz 15 MSG MAG
10
10
5 |S21e|2 0 1 10 Collector Current IC (mA) 100
5 |S21e|2 0 1 10 Collector Current IC (mA) 100
Remark The graphs indicate nominal characteristics.
8
Data Sheet PU10395EJ03V0DS
NESG2101M16
OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER
25 20 GP 15 10 Pout 5 0 -5 -20 IC
C
OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER
25 20 15 10 Pout 5 0 -5 -15 IC
C
120 100 80 60 40
120 100 GP 80 60 40
-15
-10
20 VCE = 3.6 V, f = 1 GHz Icq = 10 mA 0 10 0 5 -5
Collector Current IC (mA) Collector Efficiency C (%)
-10
-5
20 VCE = 3.6 V, f = 2 GHz Icq = 10 mA 0 15 5 10 0
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER
25 20 15 10 5 0 -5 -15 GP IC
C
OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER
25 20 15 Pout 10 5 0 -5 -10 GP IC 40 20
C
120 VCE = 3.6 V, f = 3 GHz Icq = 10 mA 100 Pout 80 60 40 20 0 15
120 VCE = 3.6 V, f = 5.2 GHz Icq = 10 mA 100 80 60
-10
-5
0
5
10
-5
0
5
10
15
0 20
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
Collector Current IC (mA) Collector Efficiency C (%)
Collector Current IC (mA) Collector Efficiency C (%)
Output Power Pout (dBm) Power Gain GP (dB)
Output Power Pout (dBm) Power Gain GP (dB)
Collector Current IC (mA) Collector Efficiency C (%)
Output Power Pout (dBm) Power Gain GP (dB)
Output Power Pout (dBm) Power Gain GP (dB)
9
NESG2101M16
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 25 5
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
25
Associated Gain Ga (dB)
Ga 3 15
3
Ga 15
2 NF
10
2 NF
10
1
5 VCE = 1 V, f = 1 GHz 0 100
1
5 VCE = 2 V, f = 1 GHz 0 100
0
1
10 Collector Current IC (mA)
0
1
10 Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 25 5
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
25
Associated Gain Ga (dB)
3 Ga 2 NF
15
3
Ga
15
10
2 NF
10
1
5 VCE = 1 V, f = 2 GHz 0 100
1
5 VCE = 2 V, f = 2 GHz 0 100
0
1
10 Collector Current IC (mA)
0
1
10 Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 25 5
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
25
Associated Gain Ga (dB)
3 Ga 2
15
3 Ga 2
15
10
10
1
NF VCE = 1 V, f = 3 GHz
5 0 100
1
NF VCE = 2 V, f = 3 GHz 1 10 Collector Current IC (mA)
5 0 100
0
1
10 Collector Current IC (mA)
0
Remark The graphs indicate nominal characteristics.
10
Data Sheet PU10395EJ03V0DS
Associated Gain Ga (dB)
4
Noise Figure NF (dB)
Noise Figure NF (dB)
20
4
20
Associated Gain Ga (dB)
Noise Figure NF (dB)
4
Noise Figure NF (dB)
20
4
20
Associated Gain Ga (dB)
Noise Figure NF (dB)
Noise Figure NF (dB)
4
20
4
20
NESG2101M16
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 4
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
25 5 4
Noise Figure NF (dB)
25
3
Ga
Associated Gain Ga (dB)
15
3 Ga 2 NF
15
2 NF
10
10
1
5 VCE = 3 V, f = 1 GHz 0 100
1
5 VCE = 3 V, f = 2 GHz 0 100
0
1
10 Collector Current IC (mA)
0
1
10 Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 4
Noise Figure NF (dB)
25
3 Ga 2
15
10
1
NF VCE = 3 V, f = 3 GHz
5 0 100
0
1
10 Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.necel.com/microwave/en/
Associated Gain Ga (dB)
20
Data Sheet PU10395EJ03V0DS
11
Associated Gain Ga (dB)
20
20
NESG2101M16
PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
1.00.05 0.8+0.07 -0.05
0.4
1.2+0.07 -0.05
2
0.8
0.4
3
0.50.05
4
5
PIN CONNECTIONS
1. 2. 3. 4. 5. 6. Collector Emitter Emitter Base Emitter Emitter
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance and heat sinking.
12
Data Sheet PU10395EJ03V0DS
0.125+0.1 -0.05
0.150.05
1
6
zH
NESG2101M16
* The information in this document is current as of September, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
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